InGaN quantum dots were grown by metal-organic vapor phase epitaxy using a phase-
separation process based on spinodal and binodal decomposition. Uncapped structures …

Phase separation suppression due to external biaxial strain is observed in InxGa1xN alloy
layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers …

Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic
chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov …

We report on phase separation in thick InGaN films with up to 50% InN grown by
metalorganic chemical vapor deposition from 690 to 780 C. InGaN films with thicknesses of …

The enhancement of phase separation in the InGaN layer grown on a GaN layer with a
rough surface was investigated for the formation of self-assembled In-rich quantum dots …

We investigated the growth behaviors of InN quantum dots (QDs) on N-polarity GaN by
molecular-beam epitaxy. The N-polarity growth has been intentionally used to raise the …

Improvements in GaN capping layer growth towards increased stability of InGaN quantum
dots (QDs) will be presented. Surface quality is enhanced with changing the carrier gas …

A fully relaxed In 0.1 Ga 0.9 N layer was grown by plasma-assisted molecular beam epitaxy
on c-plane GaN using a grading technique. The growth of the graded InGaN layer in the …

The influence of the miscut angle of GaN substrate on compositional and optical properties
of In x Ga 1− x N epilayers (0.05< x< 0.1) was examined using x-ray diffraction …

In x Ga 1− x N alloys were directly grown on sapphire substrate with a GaN nucleation layer.
The degree of phase separation in the InGaN layer on sapphire substrate is maximized at …