High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

YH Song, SJ Ahn, MW Kim, JO Lee… - Small (Weinheim an …, 2014 - europepmc.org
A hybrid complementary logic inverter consisting of a microelectromechanical system switch
as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide …

Complementary Logic Inverters: High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT (Small …

YH Song, SJK Ahn, MW Kim, JO Lee, CS Hwang, JE Pi… - Small, 2015 - Wiley Online Library
A hybrid complementary logic inverter consisting of an n-type oxide thin-film transistor (TFT)
and a microelectromechanical system switch is proposed as a promising alternative to p …

Flexible complementary oxide thin-film transistor-based inverter with high gain

SM Hsu, DY Su, FY Tsai, JZ Chen… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To
accurately read out small bio-signals, the development of high-performance flexible front …

Oxide-based complementary inverters with high gain and nanowatt power consumption

Y Yuan, J Yang, Z Hu, Y Li, L Du… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Oxide semiconductors are ideal candidates for flexible and transparent electronics. Here, we
report complementary inverters based on p-type tin monoxide and n-type indium-gallium …

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

I Isakov, AF Paterson, O Solomeshch, N Tessler… - Applied Physics …, 2016 - pubs.aip.org
We report the development of hybrid complementary inverters based on p-channel organic
and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at< 200 …

Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate

MS Oh, W Choi, K Lee, DK Hwang, S Im - Applied Physics Letters, 2008 - pubs.aip.org
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V⁠. Patterned …

High-gain complementary inverter based on corbino p-type tin monoxide and n-type indium-gallium-zinc oxide thin-film transistors

HJ Joo, MG Shin, SH Kwon, HY Jeong… - IEEE Electron …, 2019 - ieeexplore.ieee.org
The present work investigated the electrical characteristics of Corbino structure p-type tin
monoxide (SnO) thin-film transistors (TFTs) and demonstrated a high-performance …

Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors

C Lee, JH Hong, J Shin, S Lee, M Kim… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Transparent oxide semiconductors are promising materials due to their various benefits,
such as high mobility and cost-efficient production. However, oxide semiconductors …

Complementary Circuit with Self-Alignment Organic/Oxide Thin-Film Transistors

F Takeda, R Sato, S Naka… - Japanese Journal of …, 2012 - iopscience.iop.org
Complementary logic circuits with self-alignment organic/oxide thin-film transistors (TFTs)
were investigated. The layout and process steps of a self-alignment bottom-contact-type …

30.1 8b Thin-film microprocessor using a hybrid oxide-organic complementary technology with inkjet-printed P2ROM memory

K Myny, S Smout, M Rockelé… - … Solid-State Circuits …, 2014 - ieeexplore.ieee.org
We present an 8b general-purpose microprocessor realized in a hybrid oxide-organic
complementary thin-film technology. The n-type transistors are based on a solution …