Condensation of indirect excitons in coupled AlAs/GaAs quantum wells

LV Butov, A Zrenner, G Abstreiter, G Böhm… - Physical review letters, 1994 - APS
The photoluminescence of excitons confined in an electric field tunable coupled AlAs/GaAs
quantum well has been investigated at T≥ 350 mK and magnetic fields H≤ 14 T. In the …

Anomalous transport and luminescence of indirect excitons in AlAs/GaAs coupled quantum wells as evidence for exciton condensation

LV Butov, AI Filin - Physical Review B, 1998 - APS
Due to the long lifetime of indirect (interwell) excitons, exciton condensation (analogous to
the Bose-Einstein condensation of bosons) is expected to occur in coupled quantum wells …

Effect of an electric field on the luminescence of GaAs quantum wells

EE Mendez, G Bastard, LL Chang, L Esaki, H Morkoc… - Physical Review B, 1982 - APS
Low-temperature photoluminescence (PL) measurements have been performed in narrow
GaAs-Ga 1− x Al x As quantum wells subject to an electric field perpendicular to the well …

Direct and indirect excitons in coupled GaAs/As double quantum wells separated by AlAs barriers

M Bayer, VB Timofeev, F Faller, T Gutbrod, A Forchel - Physical Review B, 1996 - APS
Heavy-hole and light-hole excitons in symmetric, coupled GaAs/Al 0.30 Ga 0.70 As double
quantum wells have been investigated by photoluminescence and photoluminescence …

Electric field induced decrease of photoluminescence lifetime in GaAs quantum wells

JA Kash, EE Mendez, H Morkoc - Applied physics letters, 1985 - pubs.aip.org
Time‐resolved photoluminescence measurements of excitons in GaAs‐Ga1− x Al x As
quantum wells subject to an electric field perpendicular to the well plane have been made …

Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field

K Sivalertporn, L Mouchliadis, AL Ivanov, R Philp… - Physical Review B, 2012 - APS
An accurate calculation of the exciton ground and excited states in AlGaAs and InGaAs
coupled quantum wells (CQWs) in an external electric field is presented. An efficient and …

Negatively and positively charged excitons in quantum wells

G Finkelstein, H Shtrikman, I Bar-Joseph - Physical Review B, 1996 - APS
We report the observation of the positively charged exciton and of the triplet state of the
negatively charged exciton in modulation doped GaAs quantum wells. Applying a gate …

Comparative study of the negatively and positively charged excitons in GaAs quantum wells

S Glasberg, G Finkelstein, H Shtrikman, I Bar-Joseph - Physical Review B, 1999 - APS
We compare the photoluminescence spectra of the negatively and positively charged
excitons in GaAs quantum wells. We use a structure which enables us to observe both …

Phase transition of an exciton system in GaAs coupled quantum wells

T Fukuzawa, EE Mendez, JM Hong - Physical review letters, 1990 - APS
We have observed a sharp reduction of the photoluminescence linewidth from a two-
dimensional exciton system (coupled GaAs/AlGaAs quantum wells), at a certain critical …

Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures

A Zrenner, LV Butov, M Hagn, G Abstreiter, G Böhm… - Physical review …, 1994 - APS
We report about optical experiments on electric field tunable AlAs/GaAs coupled quantum
well structures in the regime of the electric field induced Γ-X transition. Using the …