350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …

The radiation hardness of GaN-based devices is a critical metric for applications in extreme
environments. This study investigates the structural changes in GaN and AlN induced by …

Wurtzite GaN epilayers, grown on the c-plane of sapphire substrate, have been irradiated
with swift heavy ions at different energies and fluences, and thereafter studied by Raman …

Abstract In 0.15 Ga 0.85 N/GaN bilayers irradiated with 2.3 áMeV Ne and 5.3 áMeV Kr ions
at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro …

Homogeneous radiation damage was induced in∼ 250-nm-thick In0. 18Ga0. 82N and Al0.
2Ga0. 8N films by irradiation with 8.9 MeV Bi33+ ions at room temperature. The ion fluence …

In this work, GaN epilayers, grown on (0 0 0 1) sapphire substrate, were studied under swift
heavy ion irradiation with a broad variety of projectiles at different energies. Several …

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au 16+ 197 ions are studied by a
combination of transmission electron microscopy (TEM) and Rutherford backscattering …

The structural modifications and the evolution of mechanical behavior of gallium nitride
(GaN) thin films irradiated by 92 MeV 129 Xe 23+ at different fluences have been …

Abstract In 0.18 Ga 0.82 N films were irradiated with 4 MeV 84 Kr and 8.9 MeV 209 Bi ions to
various fluences at room temperature. The irradiated films were analyzed by means of …

InP crystals and GaN films were irradiated by swift heavy ions 86 Kr and 209 Bi with kinetic
energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5× 10 10 to 3.6× 10 12 …