Current technology for the light detection in telecommunication revolves around InGaAs
based on InP substrates. However, there is interest in switching to GaAs substrates to take …

The dilute nitride GaInNAs/GaAs quantum well material has been subject to intensive study
since it was first proposed by Kondow et al. It has wide applications such as in long …

Abstract The GaInNAs (Sb) material system provides a promising solution for realizing
lowcost lasers, detectors, and optical modulators operating in the telecommunications …

In the past few years, GaInNAsSb has been found to be a potentially superior material to
both GaInNAs and InGaAsP for communications wavelength laser applications. It has been …

We report a GaNAsSb pin photodetector operating in the 1.55-μ m-wavelength region. The
device consists of two undoped 70-Å GaN 0.025 As 0.615 Sb 0.36 quantum wells …

We report on the successful epitaxial growth of InASN directly onto GaAs substrates using
nitrogen plasma source molecular beam epitaxy. The spectral properties of the resulting …

In recent years, dilute nitrides such as GaAsN and GaInNAs with typical nitrogen
concentrations in the range of a few percent have become the subject of intense research …

Dilute nitride semiconductor alloys are currently attracting considerable attention. When a
small fraction of arsenic in GaAs is replaced by nitrogen to form GaNxAs1Àx, the energy gap …

Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become
excellent candidates for a variety of lower cost 1.2–1.6µm lasers, optical amplifiers, and high …

Emerging applications in sensing, LIDAR, spectroscopy, and SWIR imaging require
photodetectors operating at wavelengths beyond the range of silicon technology and that …