We present a study of the synthesis of epitaxial V 2 O 3 films on c-plane Al 2 O 3 substrates
by reactive dc-magnetron sputtering. The results reveal a temperature window, at …

We present a study of V 2 O 3 thin films grown on c-plane Al 2 O 3 substrates by reactive dc-
magnetron sputtering. Our results reveal three distinct types of films displaying different …

We report on the deposition of high quality epitaxial V2O3 thin films on (0001) oriented
Al2O3 substrates with Molecular Beam Epitaxy. Growth of smooth V2O3 films with root mean …

Thin films of V 2 O 3 with thickness 4–300 nm were grown on-oriented sapphire substrates
by reactive dc magnetron sputtering. X-ray diffraction, pole figure measurements and …

In this study, V 2 O 3 ultrathin films about 5–20 nm thick were prepared on Al 2 O 3 (0001)
substrates through a reactive evaporation process. Auger electron spectroscopy and x-ray …

V 2 O 3 has long been studied as a prototypical strongly correlated material. The difficulty in
obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive …

We investigate the structural and electronic properties of V 2 O 3 thin films deposited by
oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane …

Thin films of V 2 O 3 were grown epitaxially on c-plane sapphire substrates by oxygen
plasma-assisted thermal evaporation. Reducing the amount of oxygen supplied during …

Thin films of V2O3 with thickness of 20–450 nm were grown on (0001) oriented sapphire
substrates by reactive electron-beam evaporation. Low-energy electron diffraction, X-ray …

V 2 O 3 presents a complex interrelationship between the metal–insulator transition and the
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …