The new emerging non-volatile memory technology of Spin Torque Transfer RAM (STT-
RAM) has been proposed as a replacement for SRAM based cache. Recently its commercial …

Loop retiming has been extensively studied to maximize instruction-level parallelism (ILP) of
multiple function units by rearranging the dependence delays in a uniform loop. Recently …

Abstract Spin-Transfer Torque RAM (STT-RAM) has the advantages of circuit density and
ignorable leakage power. However, it suffers from the bad write latency and poor write …

Due to its low leakage power and high density, spin torque transfer RAM (STT-RAM) has
become a good candidate for future on-chip cache. However, STT-RAM suffers from higher …

Spin-Transfer Torque RAM (STT-RAM) has the advantages of circuit density and ignorable
leakage power. However, it suffers from the bad write latency and poor write power …

Due to its large leakage power and low density, the conventional SARM becomes less
appealing to implement the large on-chip cache due to energy issue. Emerging non-volatile …

Spin-transfer torque RAM (STT-RAM) caches are foreseen to replace traditional static RAM
caches because of their nonvolatile nature and high density. Multilevel cell (MLC) STT …

Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAMs in on-chip
caches, due to several advantages, including non-volatility, low leakage, high integration …

Spin‐torque transfer RAM (STT‐RAM) is a promising candidate to replace SRAM for larger
Last level cache (LLC). However, it has long write latency and high write energy which …

Spin-transfer torque RAM (STT-RAM) has been proposed to build on-chip caches because
of its attractive features such as high storage density and ultra low leakage power. However …