The challenges of advanced CMOS process from 2D to 3D

HH Radamson, Y Zhang, X He, H Cui, J Li, J Xiang… - Applied Sciences, 2017 - mdpi.com
The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit
bricks in integrated circuits (ICs) have constantly changed during the past five decades. The …

Scaling challenges for advanced CMOS devices

AP Jacob, R Xie, MG Sung, L Liebmann… - … Journal of High …, 2017 - World Scientific
The economic health of the semiconductor industry requires substantial scaling of chip
power, performance, and area with every new technology node that is ramped into …

Miniaturization of CMOS

HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

An analog and digital design perspective comprehensive approach on Fin-FET (fin-field effect transistor) technology—A review

N Jain, B Raj - Reviews in Advanced Sciences and Engineering, 2016 - ingentaconnect.com
Continue scaling of Complementary Metal-Oxide-Semiconductor (CMOS) technology in
nanometer regime to achieve higher speed and low power consumption in circuits and …

Modifying the Power and Performance of 2-Dimensional MoS2 Field Effect Transistors

F Zhuo, J Wu, B Li, M Li, CL Tan, Z Luo, H Sun, Y Xu… - Research, 2023 - spj.science.org
Over the past 60 years, the semiconductor industry has been the core driver for the
development of information technology, contributing to the birth of integrated circuits …

Back to the future: Digital circuit design in the finfet era

X Guo, V Verma, P Gonzalez-Guerrero… - Journal of Low …, 2017 - ingentaconnect.com
It has been almost a decade since FinFET devices were introduced to full production; they
allowed scaling below 20 nm, thus helping to extend Moore's law by a precious decade with …

Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface

J Moers - Applied Physics A, 2007 - Springer
Tremendous progress in information technology has been made possible by the
development and optimization of metal oxide semiconductor field effect transistor (MOSFET) …

New structure transistors for advanced technology node CMOS ICs

Q Zhang, Y Zhang, Y Luo, H Yin - National Science Review, 2024 - academic.oup.com
Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

The potential of FinFETs for analog and RF circuit applications

P Wambacq, B Verbruggen, K Scheir… - … on Circuits and …, 2007 - ieeexplore.ieee.org
CMOS downscaling in the nanoscale era will necessitate drastic changes to the planar bulk
CMOS transistor to keep pace with the required speed increase while at the same time …

What is killing Moore's law? Challenges in advanced FinFET technology integration

A Malinowski, J Chen, SK Mishra… - 2019 MIXDES-26th …, 2019 - ieeexplore.ieee.org
First microprocessor released to the market in 1971 was consisting of 2300 transistors.
Following Moore's law less than five decades later consumer electronic chips consist of …