This work develops a comprehensive theoretical model for a semiconductor laser, which
exploits tunneling-injection of electrons and holes into quantum dots (QDs) from two …

A laser structure is studied, which exploits tunneling-injection of electrons and holes into
quantum dots (QDs) from two separate quantum wells (QWs). An extended theoretical model …

The potential for high-power operation of a laser exploiting tunneling-injection of electrons
and holes into quantum dots (QDs) from two separate quantum wells (QWs) is studied. An …

We develop a comprehensive theoretical model for a double tunneling-injection (DTI)
quantum dot (QD) laser. Both electrons and holes are injected into QDs by tunneling from …

Different approaches to the design of a genuinely temperature-insensitive quantum dot (QD)
laser are proposed. Suppression of the parasitic recombination outside the QDs, which is …

We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is
based on direct injection of carriers into the QDs, resulting in a strong depletion of minority …

The concept of tunneling injection was introduced in the 1990's to improve the dynamical
properties of semiconductor lasers by avoiding the problem of hot carrier injection which …

We study the optical output power of a semiconductor laser, which exploits tunneling-
injection of electrons and holes into quantum dots (QDs) from two separate quantum wells …

The effect of out-tunneling leakage of carriers from quantum dots (QDs) on modulation
bandwidth of semiconductor double tunneling-injection (DTI) QD lasers is studied. In this …

In this thesis, our primary objective was to theoretically analyze the real world modulation
bandwidth of a DTI QD laser and this was done by analyzing the effect of out-tunneling …