The photorefractive response in semi-insulating GaAs: Cr is theoretically studied when an
alternating electric field is applied to a crystal. The calculations are based on material …

Using band charge transport model, the effect of external dc electric (E 0) and magnetic
fields (B 0) on photorefractive parameters, viz, space charge electric field (E SC) and gain …

The photorefractive effect is of considerable interest for parallel optical processing
operations. Semiconductor materials have received attention because of their potentially fast …

FIG. 2. Schematic of experimental setup for two-beam coupling gain coefficient
measurements. served was 2.6 em-1 at a grating periodicity of 8 pm under an applied dc …

We show that photorefractive beam coupling gain as a function of grating period measured
in semi‐insulating GaAs with an external ac electric field or with a dc field and moving …

The photorefractive effect in semi‐insulating Cr‐doped GaAs as measured by the beam
coupling technique was investigated as functions of temperature (295–386 K) and intensity …

We present here a theoretical and experimental analysis of photorefractive two-beam
coupling in undoped GaAs as a function of temperature. Three major features are …

The paper presents an analysis of nonlinear light propagation in photorefractive gallium
arsenide. Two methods of nonlinear electron transport modelling have been distinguished …

Nonlinear transport of hot electrons in semi-insulating GaAs/AlGaAs quantum wells
significantly affects their photorefractive properties. In case of two waves mixing, this …

A microscopic model of the non-steady-state photoelectromotive force excited by a vibrating
interference pattern in a bipolar photoconductor under an external dc electric field is …