Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

This paper addresses the influences of device and circuit mismatches on paralleling the
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …

Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …

The development of the medium voltage wideband gap semiconductor SiC power devices
has enabled several applications. Most of these medium voltage high power applications …

Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …

Multichip SiC power modules with Kelvin-source connection are popular in applications with
large capacity and high switching frequency. However, dynamic current imbalance among …

Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …

This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current
imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared …

This paper reveals that there are circuit mismatches and a current coupling effect in the
direct bonded copper (DBC) layout of a silicon carbide (SiC) MOSFET multichip power …

Device parameter mismatch generates current imbalance between parallel devices. In
severe cases, the device that withstands excessive current may incur overcurrent failure …