III-V compound semiconductors and SiGe alloys can be combined to develop multijunction
solar cells on Silicon substrates with optimum bandgap combinations. Current …

A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer
layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers …

Abstract We present epitaxial 1.7 eV/1.1 eV GaAs 0.75 P 0.25/Si tandem cells with an NREL-
certified efficiency of 20.0%, enabled by a thermally stable tunnel junction interconnect …

A GaAsP/SiGe tandem solar cell on Si substrate has been further fabricated using light
trapping techniques, such as texturing and adding a back surface reflector, and thinning the …

In the search for a hybrid III-V/Si photovoltaic technology, a tandem GaAsP/SiGe solar cell
grown on silicon substrate have been developed using SiGe/Ge reverse graded buffers …

With its wide bandgap and good diode performance, GaAsP is an excellent candidate for the
top cell in a silicon-based multijunction tandem device. Even though the material is not …

Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on
Ge| Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom …

GaAsP/SiGe dual-junction solar cells have been grown on silicon substrates which have the
potential of achieving tandem efficiencies of 40%. This lattice-matched structure facilitates …

We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated
terrestrial applications, monolithically integrated on engineered Si (001) substrates. Cells …

GaAsP/SiGe dual-junction solar cells have been epitaxially grown on silicon substrates
which have the potential of achieving 1-sun tandem efficiencies of 40%. With the addition of …