The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances
HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …
[HTML][HTML] Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films
Literature is rich on the study of different strategies to tailor ferroelectric properties of HfO 2.
Among them, chemical doping is the most studied. La doped HfO 2 films have attracted …
Among them, chemical doping is the most studied. La doped HfO 2 films have attracted …
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
Ferroelectricity in HfO 2-based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO), is today one of
the most attractive topics because of its wide range of applications in ferroelectric random …
the most attractive topics because of its wide range of applications in ferroelectric random …
Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films
HfO2-based ferroelectric materials have been widely studied for their application in
ferroelectric FETs, which are compatible with conventional CMOS processes; however …
ferroelectric FETs, which are compatible with conventional CMOS processes; however …
Disentangling stress and strain effects in ferroelectric HfO2
Ferroelectric HfO 2 films are usually polycrystalline and contain a mixture of polar and
nonpolar phases. This challenges the understanding and control of polar phase stabilization …
nonpolar phases. This challenges the understanding and control of polar phase stabilization …
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
point of both the fundamentals and the applications. In this review article, the current …
[HTML][HTML] HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review
J Liao, S Dai, RC Peng, J Yang, B Zeng, M Liao… - Fundamental …, 2023 - Elsevier
The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …
required for novel non-volatile memory devices with low power consumption, fast read/write …
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
Effects of doping concentration and annealing temperatures on the ferroelectric memory properties of yttrium doped HfO2
H Chen, H Luo, X Yuan, J Yang… - Journal of Physics D …, 2022 - iopscience.iop.org
HfO 2 has been widely studied in nonvolatile memories owing to its advantages including
wide bandgap, superior ferroelectricity, low power and high density. Herein, yttrium doped …
wide bandgap, superior ferroelectricity, low power and high density. Herein, yttrium doped …
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film
grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped …
grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped …