J Xia, A Chung, S Boumaiza - 2017 IEEE MTT-S International …, 2017 - ieeexplore.ieee.org
This paper presents the design of an efficient two-stage m illim eter-wave power amplifier (PA) using stacked field-effect transistors in 45nm silicon-on-insulator (SOI) CMOS …
This paper presents the design of a 60 GHz power amplifier (PA) in a 22 nm FD-SOI CMOS technology. To improve the performance at millimeter-wave frequencies by minimizing the …
In this paper, a millimeter-wave high power and gain transformer-coupled amplifier is proposed. Designed in CMOS FD-SOI 28 nm technology and operating at 77 GHz, the 3 …
C Elgaard, A Axholt, E Westesson… - 2018 Asia-Pacific …, 2018 - ieeexplore.ieee.org
A 26 GHz power amplifier (PA) targeting millimeter wave 5G mobile systems is presented. The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …
A Hamani, A Siligaris, B Blampey… - 2020 15th European …, 2021 - ieeexplore.ieee.org
In this paper, two D-band millimeter-wave wideband and high gain power amplifiers are proposed. Designed in CMOS SOI 45 nm technology, the two amplifiers operate in two …
J Rusanen, M Hietanen, A Sethi… - 2019 IEEE Nordic …, 2019 - ieeexplore.ieee.org
This paper presents a method for extending millimeter wave power amplifier (PA) linear range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The …
In this article, we present a dual-band 28/38-GHz power amplifier (PA) with inter-band suppression for millimeter-wave 5G communications. The dual-band operation is achieved …
This paper concerns with the design of multi-stacked CMOS millimeter-wave power amplifiers suitable for phased array front-end applications using triple-well process. The …
In deeply scaled CMOS processes with gate lengths below 40 nm the analog performance of NMOS and PMOS FETs are comparable. At the same time PMOS FETs can typically …