A nitrogen-related electron trap (E1), located approximately 0.33 eV from the conduction
band minimum of GaAsN grown by chemical beam epitaxy, was confirmed by investigating …

Abstract Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS (LDLTS) techniques
have been employed to characterize electron traps in dilute GaAsN epitaxial layers grown …

A nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band
minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination …

Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon
electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the …

Deep levels in the upper half of the band gap of strained Ga (As, N) with a GaN mole fraction
of 3% are examined by deep-level transient Fourier spectroscopy on GaAs/Ga (As, N)/GaAs …

A nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-
type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient …

The hole traps associated with high background doping in p-type GaAsN grown by chemical
beam epitaxy are studied based on the changes of carrier concentration, junction …

The double carrier pulse deep level transient spectroscopy (DLTS) technique is used to
characterize recombination centers in p-type GaAsN grown by chemical beam epitaxy. The …

The relationship between a nitrogen (N)‐related hole trap and the density of ionized
acceptors (NA) in p‐type GaAsN grown by chemical beam epitaxy (CBE) is investigated …

The origin of a N-related recombination center (E1), at around 0.33 eV below the conduction
band minimum (CBM) of chemical beam epitaxy (CBE) grown GaAsN, is discussed based …