The demand for precisely controlled etching is increasing as semiconductor device
geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will …

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-
10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self …

Continued downscaling of semiconductor devices has placed stringent constraints on all
aspects of the fabrication process including plasma-assisted anisotropic etching. To address …

Atomic layer etching (ALE) is usually classified into ion-driven anisotropic etching or
thermally driven isotropic etching. In this work, we present a thermal ALE process for Si 3 N …

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions
and pitches are required in device patterning. A flux-control based cyclic Ar/C 4 F 8 ALE …

With the increasing interest in establishing directional etching methods capable of atomic
scale resolution for fabricating highly scaled electronic devices, the need for development …

In this work, a special focus is given to atomic layer etching (ALE) of metals, since this is a
relatively new field but is expected to grow rapidly given the major advancements potentially …

Plasma atomic layer etching is a dry etching process using a dose step to modify a material's
surface chemistry and an etch step to remove the modified surface layer. This method of …

The precision etch of dielectric materials (SiO 2, Si 3 N 4) in self-aligned contacts and self-
aligned multiple patterning at the 10 nm technology node and beyond is required to …

Atomic layer etching (ALE) is a promising technique that can solve the challenges
associated with continuous or pulsed plasma processes—trade-offs between selectivity …