For Raman-based carrier concentration determination in thin film semiconductors, above-
band-gap excitation is necessary, as the interference from underlying substrate is eliminated …

We have investigated the interaction between carriers and polar phonons by using Raman
scattering spectroscopy in highly conductive Al-doped ZnO films grown by metalorganic …

Multiphonon resonant Raman scattering in N‐doped ZnO films was studied, and an
enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) …

As a representative of the third-generation semiconductors, ZnO has great development
potential in the fields of optics and electricity, so the measurement on its electrical properties …

Polarized micro-Raman measurements were performed to study the phonon modes of Fe,
Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane …

ZnO and ZnO-based materials are of physical and technological interest, and currently focus
of intensive research activities. The reason for the renewed interest is that ZnO-based …

Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk
ZnO crystals and layers, including nanostructured and highly conductive films, excited by …

We have carried out a detailed temperature-dependent Raman scattering investigation on
coupled longitudinal–optical phonon–plasmon modes in N–In codoped p-type ZnO thin films …

An electric current through a transparent 80 nm ZnO thin film produces relevant changes on
its Raman spectrum. The electrical current affects the vibrational modes of ZnO that are …

A systematic investigation on the optical properties of N-doped ZnO thin films was performed
in order to understand the origin of an additional Raman mode at 275 cm− 1. This Raman …