In this paper, we present significant reductions of optical losses and contact resistances in
AgGe-based ohmic contacts to InP membranes. Due to the high solubility of Si in InGaAs …

We present the development of Ag/Ge based ohmic contacts to n-type InP with both low
contact resistances and relatively low optical losses. A specific contact resistance as low as …

Low-power and compact optical interconnects can be realized using III–V membrane
photonic integrated circuits fabricated from thin InP-based films bonded to a Si wafer using …

We demonstrate here that hydrogenation offers a simple and attractive solution to fabricate
low-loss InGaAsP/InP photonic integrated circuits operating at 1.56 μm. Using InGaAsP/InP …

We demonstrate low-loss InGaAsP/InP surface ridge waveguides with loss as low as 0.81
dB/cm measured at 1550 nm for the fundamental TE mode. These waveguides are suitable …

A GaInAs/InP waveguide-type p–i–n membrane photodetector is shown to be a strong
candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a …

We show here that the high propagation losses often measured at/spl sim/1.56 μm in
InGaAsP-InP buried-ridge stripe waveguides can be significantly brought down by …

High bandwidth 2-μm wavelength surface normal pin photodiodes using a high indium-
content InGaAs strain-relaxed absorbing layer clad by p-and n-doped AlInGaAs layers are …

We report on silicon fab-compatible non-gold ohmic contacts to n-InP and p-InGaAs using
Ti/W and Pd/Ge/W based metallization schemes where gold is replaced by aluminum as a …

High bandwidth 2 μm wavelength surface normal pin photodiodes using a high indium-
content InGaAs strain-relaxed absorbing layer clad by p and n doped AlInGaAs layers are …