[图书][B] InP and related compounds: materials, applications and devices

MO Manasreh - 2000 - taylorfrancis.com
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …

Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs

M Quillec - Physical Concepts of Materials for Novel …, 1991 - spiedigitallibrary.org
Two quaternary Ill-V systems are available for InP based opto and micro-electronics:
InGaAsP and InGaAlAs. The first has been extensively studied with remarkable success for …

Growth and characterization of InGaAsP lattice-matched to InP

PA Houston - Journal of Materials Science, 1981 - Springer
The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …

The history and future of InP based electronics and optoelectronics

DL Lile - … . 1998 International Conference on Indium Phosphide …, 1998 - ieeexplore.ieee.org
Just as the III-V compounds and alloys have competed with Si for market share so InP has
continually battled GaAs for the niches where this class of materials has the advantage. In …

[图书][B] The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications

M Razeghi - 2010 - taylorfrancis.com
Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive
review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and …

Indium phosphide-based photonic circuits and components

A Sneh, CR Doerr - Integrated Optical Circuits and Components, 2020 - taylorfrancis.com
Semiconductor optoelectronic integration is an important branch of integrated optics. The
large versatility in device design and functionality, manifested in the ability to provide in a …

Recent developments in InP and related compounds

M Henini - III-Vs Review, 2000 - Elsevier
Although indium phosphide (InP) is hardly known outside the ranks of semiconductor
specialists, it must be one of the most thoroughly investigated compound materials known …

Growth of InAs/InP and InAsP/InP heterostructures by chemical beam epitaxy

A Freundlich, AH Bensaoula, A Bensaoula - Journal of crystal growth, 1993 - Elsevier
We report for the first time that high quality pseudomorphically strained InAs 1-x P x/InP and
InAs/InP (3% lattice mismatch) superlattices (SL) and strained multi-quantum wells (SMQWs) …

X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface

T Akane, K Sugioka, K Midorikawa… - Journal of Applied …, 2001 - pubs.aip.org
InP-based compounds, such as InGaAsP, are key materials for high-performance photonic
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …

[引用][C] InP bulk crystal growth and characterization

DF Bliss, O Wada, H Hasegawa - InP-Based Materials and …, 1999 - Wiley-Interscience