With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …

With the transition from planar to three‐dimensional device architectures such as FinFets,
TFETs and nanowires, new metrology approaches are required to characterize the 3D …

In this perspectives paper we will explore the doping state-of-the-art as it evolves for 3D to
2D structures and materials, and the following impact on the metrology methods needed to …

As device dimensions decrease and packing densities increase, the need for accurate
mapping of dopant profiles in at least two dimensions is becoming ever more acute. Such …

The National Technology Roadmap for Semiconductors calls for development of two‐and
three‐dimensional dopant profiling methods for calibration of technology computer‐aided …

This article discusses the results obtained from an extensive comparison set up between
nine different European laboratories using different two-dimensional (2D) dopant profiling …

With the transition from planar to three-dimensional device architectures such as Fin field-
effect-transistors (FinFETs), new metrology approaches are required to meet the needs of …

An overview of the existing two-dimensional carrier profiling tools using scanning probe
microscopy includes several scanning tunneling microscopy modes, scanning capacitance …

Technological progress has spurred the development of increasingly sophisticated
analytical devices. The full characterization of structures in terms of sample volume and …

The problem of measuring two‐dimensional (2D) diffusion profiles in silicon is a critical one.
Several very different methods for 2D dopant profiling have been proposed recently, but the …