Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter… - … status solidi (b), 2014 - Wiley Online Library
The structural and optical properties of GaAs1− xBix alloys for x up to 0.108 have been
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …
Composition dependence of photoluminescence of GaAs1− xBix alloys
Room temperature photoluminescence (PL) spectra have been measured for GaAs 1− x Bi x
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
The effect of Bi composition to the optical quality of GaAs1− xBix
GaAs 1− x Bi x alloys grown by molecular beam epitaxy for x up to 0.06 were studied by
photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x< …
photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x< …
Photoluminescence investigation of high quality GaAs1− xBix on GaAs
Photoluminescence (PL) of GaAs 0.97 Bi 0.03 alloy was measured over a wide range of
temperatures and excitation powers. Room temperature PL with peak wavelength of 1038 …
temperatures and excitation powers. Room temperature PL with peak wavelength of 1038 …
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter… - Applied Physics …, 2012 - pubs.aip.org
The effects of rapid thermal annealing on the optical and structural properties of GaAs 1-x Bi
x alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the …
x alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the …
Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys
Photoreflectance (PR) and photoluminescence (PL) spectra of GaAs 1− x Bi x alloys grown
by metalorganic vapor phase epitaxy, for x up to 4.8%, were measured at temperatures …
by metalorganic vapor phase epitaxy, for x up to 4.8%, were measured at temperatures …
Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8%
M Masnadi-Shirazi, RB Lewis… - Journal of Applied …, 2014 - pubs.aip.org
The compositional dependence of the fundamental bandgap of pseudomorphic GaAs 1− x
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
Thermal annealing effects on the optical and structural properties of (1 0 0) GaAs1− xBix layers grown by molecular beam epitaxy
The effects of long time thermal annealing at 200° C on the optical and structural properties
of GaAs 1− x Bi x alloys were investigated by X-ray diffraction (XRD), field emission …
of GaAs 1− x Bi x alloys were investigated by X-ray diffraction (XRD), field emission …
High hole mobility in GaAs1-xBix alloys
K Kado, T Fuyuki, K Yamada, K Oe… - Japanese Journal of …, 2012 - iopscience.iop.org
A hole mobility of∼ 200 cm 2 V-1 s-1 was demonstrated for GaAs 1-x Bi x (x≤ 4%). This
value is comparable to that of GaAs with the same hole concentration. The hole mobility of …
value is comparable to that of GaAs with the same hole concentration. The hole mobility of …
Configuration dependence of band-gap narrowing and localization in dilute alloys
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for
experimental engineering of the band gap E g at low Bi concentrations (≤ 2%), in particular …
experimental engineering of the band gap E g at low Bi concentrations (≤ 2%), in particular …