Diffusion experiments of Cd in InP and InGaAs, lattice matched to InP, are reported. The
diffusion technique employed preserves the high-quality surface of the samples. Results on …

The diffusion of Cd and Zn into InP was investigated at temperatures ranging from 566 C to
715 C. Cd diffusion using a combination source composed of Cd 3 P 2 and InP powder …

Diffusion experiments of Zn and Cd in VPE InGaAs, lattice matched to InP, are reported. A
closed ampoule technique is used. For the simultaneous diffusion of Zn and Cd from a Zn 3 …

Self-diffusion in single crystal InP and GaAs has been measured, together with the diffusion
of the acceptors Cd and Zn and the donors S and Se in GaAs. Radioactive isotopes of these …

We present the results of a photoluminescence study of interdiffusion on the group-III
sublattice in the ternary In-Ga-As/In-Ga-As and the quaternary In-Ga-As-P/In-Ga-As-P …

Measurements of the Ga diffusion into CdS, in the presence of exces Ga metal, using optical
and mixroprobe analyser techniques are reported. A reaction layer of CdGa 2 S 4 forms on …

The influence of concurrent Zn diffusion on the interdiffusion in an InO. Db Gao 94 p (WS
ASO. 95-GaAs heterostructure grown by liquid phase epitaxy was investigated, A 25 h, 700 …

It is shown that for LPE at constant temperature in an (n+ 1) component system the layer
thickness is proportional to√ t and the solid composition is constant irrespective of the …

Cunnell and Gooch, 3 referred to as CG, observed from tracer measurements that Cd
apparently diffused uphill deep in the interior of GaAs samples.(Diffusion toward a region of …

The surface diffusion of group III atom incorporation in the MBE of GaAs and InAs is
reviewed. First the diffusion length of incorporation on the (001) top surface with the (111) A …