We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …

The characteristic emission from tail states below the bandgap of GaAsBi/GaAs quantum
wells is studied using photoluminescence spectroscopy over a 10–300 K temperature range …

The puzzling electronic and transport properties of the Ga (AsBi) alloy are investigated for a
wide range of Bi‐concentrations (x= 0–10.6%) by means of various experimental techniques …

A hole mobility of∼ 200 cm 2 V-1 s-1 was demonstrated for GaAs 1-x Bi x (x≤ 4%). This
value is comparable to that of GaAs with the same hole concentration. The hole mobility of …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

The dilute bismide semiconductor GaAs1–xBix is an interesting new semiconductor alloy
with novel properties and potential device applications. Like the dilute nitride alloy GaAs1 …

We report p-type conductivity in nominally undoped GaAs 1–x Bi x epilayers for a wide
range of Bi-concentrations (0.6%≤ x≤ 10.6%). The counterintuitive increase of the …

The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown
under various conditions were studied by photoluminescence (PL), high resolution x-ray …

Abstract Dilute bismides (% Bi∼ 1%–3%) are excellent candidates for the fabrication of
optoelectronic devices, thanks to the strong reduction in the bandgap with increasing …

Far-infrared absorption measurements have been performed in nominally undoped GaAs 1-
x Bi x (0.6%⩽ x⩽ 10.6%) for magnetic field up to 30 T. For 0.6%⩽ x⩽ 4.5%, the Lyman series …