Ti-Ni films with various Ni contents (16.5, 22.0, 33.5 at.%) were deposited on Al alloy
substrates using DC magnetron co-sputtering. The effects of Ni target power and substrate …

51.39 at.% Ti–48.61 at.% Ni thin films were prepared by magnetron sputtering and post-
annealed at 450, 500, 550 and 600° C, respectively. Crystallization kinetics of as-deposited …

In order to attain high-quality Ti–Ni–Cu film, the surface morphologies, chemical
compositions and mechanical properties of Ti–Ni–Cu thin films prepared by direct current …

Inductively coupled plasmas (ICPs) were generated to assist magnetron sputtering. By
bombarding the growing film with a high-density (∼ 2.0 mA/cm2) low-energy (∼ 22 eV) ion …

Abstract Nanocrystalline Ti-Al-Ni-N thin films with different Ni content were prepared by
sputtering Ti, Al and Ni targets one after the other in N 2 gas atmosphere at 600° C and by …

Abstract Quaternary Ti–Si–C–N films with different silicon contents were deposited on Si
(100) substrates by dc magnetron sputtering of multicomponent Ti/C/Si target in an Ar/N 2 …

Abstract Composite Ti–Y–N films with various Y contents (0–7.8 at.%) were deposited by
reactive magnetron sputtering to investigate the crystal structure, oxidation resistance …

Ti–Al–N, Ti–Al–Si–N and Ti–Al–Hf–N films were deposited on 1Cr11Ni2W2MoV stainless
steel by arc ion plating (AIP) with a Ti70Al30, a Ti60Al30Si10 and a Ti68Al30Hf2 cathode …

Ti–Al–N films were deposited on Si (1 0 0) and mirror-polished stainless steel at 300° C by
RF-ICPIS enhanced magnetron sputtering technique. Focusing on the effects of Al …

A feasibility of using Ti 1− x Y x N as a hard coating material was investigated. Coatings
were made on a Si (100) surface as well as on a steel surface using a dual-target rf-dc …