We present inductively-coupled-plasma, reactive-ion-etching (ICP-RIE) techniques with 2
orders of magnitude difference in etch rates, for the Al_xGa_1-xAs material system. These …

Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide
range of InP-based materials has been developed. The effect of plasma chemistry (the N 2 …

Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics
applications. Efficient guiding and confinement of single-mode light in these waveguides …

Planar two-dimensional photonic crystals are key tools for the development of advanced
optoelectronic devices. However, their practical realization often requires deep etching of air …

We report low-loss deep-etch AlGaAs optical waveguides fabricated with nitrogen plasma-
assisted photoresist reflow. The simultaneous application of a nitrogen plasma and heat is …

We obtained high-performance InGaAsP/InP buried heterostructure lasers integrated with
butt-coupled waveguides using reactive ion etching (RIE) for mesa definition, brief chemical …

A process for fabricating deep-etched nanostructures in AlGaInP and GaAs using a BCl 3/Cl
2/Ar inductively coupled plasma (ICP) is reported. The sidewall profile of 4 µm wide ridges …

This study demonstrates etch profile engineering of InP, In 1− x Ga x As 1− y P y, and In 0.53
Ga 0.47 As heterostructures results from adding H 2 to standard Cl 2/Ar inductively coupled …

In the fabrication of III-V integrated optic and microelectronic devices, there is a need for
improved etching processes. As reported previously [1], laser-assisted wet chemical etching …

In this article, we investigate the dry etching of Ga In P∕ Ga As based material system using
an inductively coupled plasma (ICP) etching system. In a view to develop a suitable ICP …