AlGaAs is a promising material for integrated nonlinear photonics due to its intrinsic high
nonlinearity. However, the challenging fabrication of deep etched AlGaAs devices makes it …

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent
optoelectronic properties. They also possess strong material nonlinearity as well as high …

Recent advances in integrated nonlinear material platforms and low-loss optical
microresonators enabled a broad range of chip-scale optical applications, such as optical …

We realize an AlGaAs-on-sapphire platform through-assisted direct wafer bonding and
substrate removal processes. The direct wafer bonding process is optimized concerning the …

In this Letter, we demonstrate a low loss gallium arsenide and aluminum gallium arsenide
on an insulator platform by heterogenous integration. The resonators on this platform exhibit …

We report on the efficient nonlinear optical interactions in AlGaAs strip-loaded waveguides
with a wafer composition specifically designed to increase the nonlinear coefficient. We …

We present a side-by-side comparison of the nonlinear behavior of four passive AlGaAs
ridge waveguides where the bandgap energy of the core layers ranges from 1.60 to 1.79 eV …

We present an AlGaAs-on-insulator platform for integrated nonlinear photonics. We
demonstrate the highest reported conversion efficiency/length/pump-power, ultra-broadband …

We report the first observation of enhanced third-order nonlinear effects in AlGaAs
nanowires. AlGaAs nanowaveguides with widths varying from 100 to 600nm were fabricated …

Tremendous scientific progress has been achieved through the development of nonlinear
integrated photonics. Prominent examples are Kerr frequency comb generation in …