Los avances en la tecnología de fabricación de transistores MOS para aplicaciones en
sistemas de comunicación en el rango de las micro-ondas, ha sido posible gracias al …

The scaling of CMOS technology to 100nm and below and the endless pursuit of higher
operating frequencies drives the need to accurately model effects such as gate leakage and …

Small-signal S-parameters measured on wafer for conventional NMOS devices with gate
lengths ranging from 10 J. Lm down to 0.35 J. Lm have been-used to clarify and model the …

The estimation and optimization of leakage power become more and more important with
technology scalling. Besides subthreshold and gate leakage, the band-to-band (BTBT) …

CMOS technology scaling has resulted in a continuous improvement in RF performance of
silicon MOSFETs. fT and fMAX in excess of 300GHz has been demonstrated in production …

The development of applications in millimeter wave range (mmW) during the last decade is
strongly related to continuous progress of Si Technology, which kept on evolving through …

A predictive, physically based substrate resistance model for CMOS transistors operating at
radio frequencies (RF) is described. This analytical model is scalable with transistor size and …

CMOS technology has now reached a state of evolution, in terms of both frequency and
noise, where it is becoming a serious contender for radio frequency (RF) applications in the …

An improved model to account for the substrate‐loss effects in RF‐MOSFETs, which
includes its associated parameter extraction, is presented in this paper. This model …

The rapid development and expansion of the wireless communication market has driven the
wide application of radio-frequency integrated circuits (RFICs). The spectrum for most …