This study demonstrates the atomic layer epitaxial growth of titanium nitride (TiN) with a
record-low resistivity (8.2× 1 0− 8 Ω∙ m) by hydrogen-manipulated chemical reaction on each …

Tantalum (Ta) and nitrogen-contained tantalum (Ta–N) thin films are sputter deposited on Si-
based substrates with and without a titanium adhesion layer. The impact of varying the …

Titanium nitride (TiN) thin films grown by atomic layer deposition (ALD) have attracted
considerable attention as electrode materials in semiconductor device applications, such as …

Titanium nitride (TiN) is a known superconducting material that is attractive for use as
passive components in superconducting circuits for both conventional and quantum …

The resistivity of halogen-free atomic layer deposition (ALD) TiN thin films was decreased to
220 μΩ cm by combining the use of a high-thermal stability nonhalogenated Ti precursor …

This study presents a comprehensive investigation into the exceptional superconducting
attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer …

Beyond 0.13 μm feature size, a bilayer of Ta/TaN is commonly used as a metal barrier and
adhesive layer for copper multilevel interconnections. However, for the Ta films, cubic α …

Film crystallinity is one of the key factors determining the resistivity of thin conductive nitride
films. In the process of plasma enhanced atomic layer deposition (PEALD), the film …

Titanium nitride thin films have been formed in the temperature range of 400–600° C by
annealing Ag/Ti bilayer films on oxidized Si substrates in an ammonia ambient. Rutherford …

Electron-enhanced atomic layer deposition (EE-ALD) of titanium nitride (TiN) films was
achieved using sequential exposures of tetrakis (dimethylamido) titanium (TDMAT) and low …