This work focuses on the modeling and optimization of a structure based on InGaP/InGaAs/
InGaAsN/Ge for photovoltaic. In this study we took into consideration the concentration effect …

This paper reports the theoretical design and performance of InxGa1-xN-based multi-
junction (MJ) solar cells as a promising candidate for future high performance solar cells. A …

The primary objective of this modeling investigation is to optimize a multijunction tandem
device under the AM1. 5G spectrum. Based on previous studies, InP and Ge cells, because …

The main challenge in the photovoltaic industry is making the solar cells more cost effective.
Single junction solar cells can only absorb a certain wavelength of the solar spectrum …

In this model we investigate theoretically the characteristics of multi junction InxGa1-xN
series-connected solar cells under air mass 1.5 global irradiance spectrum using Matlab …

A model to optimize single-junction InGaP based solar cells for soundly high photovoltaic
characteristics is proposed. The simulated photovoltaic (PV) characteristics include current …

As a result of developing wide bandgap InGaP double hetero structure tunnel junction for
sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge …

We present results obtained using MATLAB/Simulink to simulate, experimental data and
manufacturer materials specifications of a solar energy generation system …

Although technologies for the InGaP/InGaAs/Ge cell have been matured, there is still room
for improvement of the InGaP/(In) GaAs/Ge cell in practical level. Band gap of the top cell …

We demonstrated mainly some of the different parameters effects-as a function of
temperature-as window layers, thickness, and doping of the various layers (emitter, base …