This review discusses new developments in our attempts to understand the fundamental
aspects of organometallic vapor phase epitaxy (OMVPE), a process now widely used in the …

The first success with the growth of III/V semiconductor materials by OMVPE dates back to
the mid-1950s. Today, it is the largest volume technique for the production of III/V photonic …

During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of
III/V semiconductor materials, the choice of group III and group V source molecules has …

The explosive growth of compound semiconductors into the fields of electronic and optical
devices has been due to the development of advances epitaxial growth techniques. These …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

In this paper we present an overview of the use of X-ray measurements to determine the
atomic mechanisms of organometallic vapor phase epitaxy (OMVPE). Detailed information …

Organometallic vapor phase epitaxy (OMVPE) has emerged in this past decade as a flexible
and powerful epitaxial materials synthesis technology for a wide range of compound …

This article summarizes the metal-organic vapor phase epitaxy (MOVPE) growth technique
and its use for the growth of compound semiconductor films and devices structures. In the …

Ultraviolet irradiation during deposition has been reported to improve the morphology and
increase the growth rate of GaAs epitaxial layers produced by metallo‐organic vapor phase …

Kinetic effects limiting the growth rate in MOVPE of III–V compounds are analyzed. A general
mechanism—the blocking of group III species adsorption sites by methyl radicals—is …