We investigate the compositional homogeneity of InGaN thin films with a high In content
grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition …

We use cathodoluminescence (CL) mapping and Kelvin probe force microscopy (KFM) to
investigate fluctuations of the InN mole fraction in InGaN films grown by radio‐frequency …

We report the use of microfocused three-dimensional x-ray reciprocal space mapping to
study InGaN epilayers with average InN content∼ 20%-22%. Analysis of the full volume of …

The processes leading to the formation of a spatially nonuniform distribution of indium in the
In x Ga 1− x N layers with x= 0− 0.6 grown by molecular beam epitaxy with plasma activation …

Phase separation in InGaN layers grown by metalorganic chemical vapor deposition on
GaN epilayers was investigated using transmission electron microscopy. Layer thicknesses …

The main results of a complete study by Transmission and Scanning-Transmission Electron
Microscopies ((S) TEM) are described for (i) InGaN/Si (111) heterostructures in the whole …

A comprehensive study on the impact of growth modes on the structural and optical
properties of thick InGaN layers suitable for photovoltaic application is presented. Samples …

An overview is given about microstructure and composition analyses of InGaN quantum
wells embedded in Ga (Al) N barriers to study the mechanisms which determine the In …

We present optoelectronic and structural layer properties of InN and InGaN epilayers grown
on sapphire templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical …

The surface confinement of InN-rich phase in thick In0. 15Ga0. 85N epitaxial films on GaN
were observed by photoluminescence depth profiling employing an inductively coupled Cl2 …