A 150–175 GHz 30-dB S21 G-band Power Amplifier with 0.25-WPout and 15.7% PAE in a 250-nm InP HBT Technology

Z Griffith, M Urteaga, P Rowell… - 2022 IEEE/MTT-S …, 2022 - ieeexplore.ieee.org
We report a five-gain-stage 150–175 GHz solid-state power amplifier (PA, SSPA) integrated
circuit (MMIC) having 23–24 dBm output power Pout, high gain, and high power-added …

A 150–175-GHz 30-dB S21 Power Amplifier With 125-mW Pout and 16.2% PAE Using InP HBT

Z Griffith, M Urteaga, P Rowell… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
We report a five-gain-stage 150–175-GHz solid-state power amplifier (PA, SSPA) monolithic
microwave integrated circuit (MMIC) having modest 20–21-dBm output power, high gain …

A -Band SSPA With 100–140-mW , >20% PAE, and 26–30-dB Gain Across 88–104 GHz

Z Griffith, M Urteaga, P Rowell - IEEE Microwave and Wireless …, 2020 - ieeexplore.ieee.org
We report a three-gain-stage 88-104-GHz W-band solid-state power amplifier (SSPA)
monolithic microwave integrated circuit (MMIC) having modest 100-140-mW output power …

A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA, High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT

Z Griffith, M Urteaga, P Rowell… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier
(SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five …

A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, high-gain, broadband power amplifier MMICs in 250-nm InP HBT

Z Griffith, M Urteaga, P Rowell - 2019 IEEE MTT-S International …, 2019 - ieeexplore.ieee.org
Two high-gain, broadband power amplifier MMICs are reported. The first result is a 140-GHz
0.25-W PA. It utilizes 5-gain stages and 4-way power combining. S 21 gain is 29.4-dB. It …

A 50–80mW SSPA from 190.8–244GHz at 0.5mW Pin

Z Griffith, M Urteaga, P Rowell… - 2014 IEEE MTT-S …, 2014 - ieeexplore.ieee.org
A 190.8-244GHz solid-state power amplifier MMIC is presented demonstrating 50-80mW P
out at 0.5 mW P in and 1.77 WP DC. This represents> 20dB of large-signal gain across …

A 115-185 GHz 75-115 mW high-gain PA MMIC in 250-nm InP HBT

Z Griffith, M Urteaga, P Rowell - 2019 14th European …, 2019 - ieeexplore.ieee.org
We report here a 250-nm InP HBT based wideband power amplifier that operates between
110-190 GHz and fully covers D-band (110-170 GHz). It utilizes 5-gain stages and 2-way on …

A compact 140-GHz, 150-mW high-gain power amplifier MMIC in 250-nm InP HBT

Z Griffith, M Urteaga, P Rowell - IEEE Microwave and Wireless …, 2019 - ieeexplore.ieee.org
We report here a compact 140-GHz, 150-mW high-gain solid-state power amplifier (SSPA)
monolithic microwave integrated circuit (MMIC) demonstrated in a 250-nm InP HBT …

A 140GHz power amplifier with 20.5 dBm output power and 20.8% PAE in 250-nm InP HBT technology

ASH Ahmed, M Seo, AA Farid… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
We report a high-efficiency D-band power amplifier in 250nm InP HBT technology. The
design has three common-base stages and a low-loss 4: 1 transmission-line output power …

A 190-210GHz Power Amplifier with 17.7-18.5 dBm Output Power and 6.9-8.5% PAE

ASH Ahmed, U Soylu, M Seo, M Urteaga… - 2021 IEEE MTT-S …, 2021 - ieeexplore.ieee.org
We report a high-efficiency G-band power amplifier in 250nm InP HBT technology. The
amplifier has four capacitively linearized common base stages. Four power cells are …