A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS
This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …
generation (5G) mobile user equipment integrated phased array transceivers. The output …
20.6 A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS
Rapidly growing demand for broadband-cellular-data traffic is driving fifth-generation (5G)
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
A 25–35 GHz neutralized continuous class-F CMOS power amplifier for 5G mobile communications achieving 26% modulation PAE at 1.5 Gb/s and 46.4% peak PAE
This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMax applications
In recent years, there has been tremendous interest in trying to implement the power
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …
A 28GHz 41%-PAE linear CMOS power amplifier using a transformer-based AM-PM distortion-correction technique for 5G phased arrays
To fulfill the insatiable demand for high data-rates, the millimeter-wave (mmW) 5G
communication standard will extensively use high-order complex-modulation schemes (eg …
communication standard will extensively use high-order complex-modulation schemes (eg …
A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS
Y Zhang, P Reynaert - 2017 IEEE Radio Frequency Integrated …, 2017 - ieeexplore.ieee.org
This paper presents a high-efficiency, linear power amplifier (PA) for 28GHz mobile
communications in 40nm CMOS technology. The design and layout are optimized for high …
communications in 40nm CMOS technology. The design and layout are optimized for high …
A 16-element phased-array CMOS transmitter with variable gain controlled linear power amplifier for 5G new radio
This paper presents a 28-GHz 16-element phased-array transmitter for the fifth-generation
(5G) new radio (NR) applications, focusing on the power amplifier (PA). The IC was …
(5G) new radio (NR) applications, focusing on the power amplifier (PA). The IC was …
2.7 A wideband 28GHz power amplifier supporting 8× 100MHz carrier aggregation for 5G in 40nm CMOS
To meet rising demand, broadband-cellular-data providers are racing to deploy fifth
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS
D Zhao, P Reynaert - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
A 60-GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology.
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
A 40% PAE frequency-reconfigurable CMOS power amplifier with tunable gate–drain neutralization for 28-GHz 5G radios
In this paper, a high-efficiency frequency-reconfigurable CMOS power amplifier (PA) design
technique is presented at 24 and 28 GHz using integrated tunable neutralization and …
technique is presented at 24 and 28 GHz using integrated tunable neutralization and …