Three-dimensional III-nitride micro-structures are being developed as a promising candidate
for the future opto-electrical devices. In this study, we demonstrate a quick and straight …

The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is
reported using the study of lattice vibrational modes in the evanescent field of Au …

III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs).
However, the characterization of doping incorporation in nanorod (NR) structures, which is …

We investigate, via temperature and excitation density dependent quasi-resonant confocal
micro-photoluminescence, the optical properties and internal quantum efficiency (IQE) of …

The impact of InGaN quantum disk (Qdisk) thickness on the optical emission properties of
axial InGaN/GaN nanowires is experimentally studied. The luminescence of InGaN/GaN …

In this paper, we study band-to-band and intersubband (ISB) characteristics of Si-and Ge-
doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in …

GaN/InGaN core–shell nanorods are promising for optoelectronic applications due to the
absence of polarization-related electric fields on the sidewalls, a lower defect density, a …

There is common agreement that dimensional downscaling of III-nitride light-emitting diodes
leads to spectral blue shifts due to strain relaxation of the quantum wells (QWs). Near-field …

The carrier concentration in as-grown ensembles of n-type GaN nanowires was determined
by Raman spectroscopy of the coupled longitudinal phonon–plasmon (LPP+) mode and …

We report an original and straightforward method for both optical and electrical
characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible …