Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

The need for increased control of layer thickness and uniformity as device dimensions shrink
has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to …

Continuing improvement in device density and performance has significantly affected the
dimensions and complexity of the wiring structure for on-chip interconnects. These …

The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

Although high dielectric constant (k) oxide thin film has been considered as a key element
for high performance and low-voltage driven thin-film transistors (TFTs), there are no …

This article discusses the bonding chemistry of alternative high-k gate dielectrics that have
been considered for advanced complementary metal–oxide–semiconductor devices. The …

High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …

Structural, optical, and mechanical properties of Al_2O_3, SiO_2, and HfO_2 materials
prepared by plasma-enhanced atomic layer deposition (PEALD) were investigated …

Silicon oxide has been utilized as gate dielectric material for over 40 years [1]. However,
progressive minimization of transistor dimensions requires the gate oxide layers with very …