High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

The drive toward smaller and smaller electronic componentry has huge implications for the
materials currently being used. As quantum mechanical effects begin to dominate …

Issues relating to the high-K gate dielectric are among the greatest challenges for the
evolving International Technology Roadmap for Semiconductors (ITRS). More than just an …

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors,
from both a fundamental and a technological viewpoint, summarizing the latest research …

This article discusses recent developments in high dielectric constant gate insulator
materials for future ultra-large-scale integration devices below 100 nm. Since conventional …

Genesis. I began writing a book on ultrathin gate dielectrics all by myself but was making
poor progress; it was not clear to me when I would be able to complete the project. Then, at …

High-κ Dielectric Materials for Microelectronics Page 1 Critical Reviews in Solid State and
Materials Sciences, 28:231–285, 2003 Copyright C Taylor and Francis Inc. ISSN: 1040-8436 …

The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS)
transistor technology will require the replacement of SiO 2 with gate dielectrics that have a …

The main goal of this book is to review at the nano and atomic scale the very complex
scientific issues that pertain to the use of advanced high dielectric constant (high-k) …

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to
enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) …