The work presented in this thesis investigates the characterisation and optimisation of InAs
quantum dots for the purpose of electro-absorption modulators. The modulator is a crucial …

We report the characteristics of 1.3 μ m electroabsorption modulators (EAMs) utilizing the
InAs/InGaAs/GaAs quantum dot (QD) structures. While extinction ratio of∼ 10 dB was …

The quantum-confined Stark effect in InAs/In (Ga) As quantum dots (QDs) using non-
intentionally doped and p-doped QD barriers was investigated to compare their performance …

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600° C-
annealed, and 750° C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs …

Theoretical predictions corroborated with experimental observations of III-V compound
semiconductor normal-incidence electroabsorption modulators and edge-coupled …

A modelling routine has been developed to quantify effects present in p-modulation doped
1.3 μm InAs/InGaAs quantum dot laser and modulator devices. Utilising experimentally …

The potential of using InAs quantum dots, epitaxially grown on a Si substrate, as an optical
modulator have been investigated. By exploiting the quantum-confined Stark effect across …

CMP4 - 1.3 (mu)m Quantum-Dot Electro-Absorption Modulator Page 1 1.3 μm Quantum-Dot
Electro-Absorption Modulator Y. Chu, MG Thompson, RV Penty and IH White Department of …

QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots Page 1
QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots Joe …

In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of
an electroabsorption modulator (EAM). The QD-EAM is a pin ridge waveguide structure with …