Multibit memory operation of metal-oxide bi-layer memristors
Emerging nanoionic memristive devices are considered as the memory technology of the
future and have been winning a great deal of attention due to their ability to perform fast and …
future and have been winning a great deal of attention due to their ability to perform fast and …
Memristor based on inorganic and organic two-dimensional materials: mechanisms, performance, and synaptic applications
K Liao, P Lei, M Tu, S Luo, T Jiang… - ACS Applied Materials …, 2021 - ACS Publications
A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors.
Recently, memristors have been highly desirable for both fundamental research and …
Recently, memristors have been highly desirable for both fundamental research and …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
Memristors based on 2D materials as an artificial synapse for neuromorphic electronics
The memristor, a composite word of memory and resistor, has become one of the most
important electronic components for brain‐inspired neuromorphic computing in recent years …
important electronic components for brain‐inspired neuromorphic computing in recent years …
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
Nanoscale metal oxide memristors have potential in the development of brain-inspired
computing systems that are scalable and efficient. In such systems, memristors represent the …
computing systems that are scalable and efficient. In such systems, memristors represent the …
Tuning resistive switching characteristics of tantalum oxide memristors through Si doping
An oxide memristor device changes its internal state according to the history of the applied
voltage and current. The principle of resistive switching (RS) is based on ion transport (eg …
voltage and current. The principle of resistive switching (RS) is based on ion transport (eg …
Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set …
Understanding the resistance switching behavior of oxide-based memristive devices is
critical for evaluating their usefulness in nonvolatile memory and/or in artificial neural …
critical for evaluating their usefulness in nonvolatile memory and/or in artificial neural …
Room-temperature fabricated multilevel nonvolatile lead-free cesium halide memristors for reconfigurable in-memory computing
TK Su, WK Cheng, CY Chen, WC Wang, YT Chuang… - ACS …, 2022 - ACS Publications
Recently, conductive-bridging memristors based on metal halides, such as halide
perovskites, have been demonstrated as promising components for brain-inspired hardware …
perovskites, have been demonstrated as promising components for brain-inspired hardware …
Recent advances in memristive materials for artificial synapses
Neuromorphic architectures are in the spotlight as promising candidates for substituting
current computing systems owing to their high operation speed, scale‐down ability, and …
current computing systems owing to their high operation speed, scale‐down ability, and …
Redox-based memristive devices for new computing paradigm
R Dittmann, JP Strachan - APL materials, 2019 - pubs.aip.org
Memristive devices have been a hot topic in nanoelectronics for the last two decades in both
academia and industry. Originally proposed as digital (binary) nonvolatile random access …
academia and industry. Originally proposed as digital (binary) nonvolatile random access …