The distribution of charge carriers inside the active region of a terahertz (THz) quantum
cascade laser (QCL) has been measured with scanning spreading resistance microscopy …

Terahertz time-domain spectroscopy is shown to provide a convenient and rapid means to
measure the conductivity of individual layers in semiconductor heterostructures such as …

A terahertz quantum cascade laser is presented in which selectively placed pure AlAs
barriers are used to reduce parasitic leakage currents to the conduction band continuum …

The spectral gain of bound-to-continuum terahertz quantum cascade lasers (QCLs) is
measured as a function of current density using terahertz time-domain spectroscopy. During …

Details of the design, growth, fabrication, and operation of quantum cascade lasers (QCLs)
that emit in the terahertz region (1–10THz) of the electromagnetic spectrum are presented …

We have determined the interface profiles of GaAs/Al 0.25 Ga 0.75 As and GaAs/AlAs
terahertz quantum-cascade laser structures using transmission electron microscopy (TEM) …

The terahertz gap, lying roughly between 300 GHz (0.3 THz) and 30 THz in the
electromagnetic spectrum, exists because the frequencies generated by semiconductor …

We demonstrate that dopant migration and the resulting impurity scattering can strongly
influence the performance of GaAs/Al 0.15 Ga 0.85 As terahertz quantum cascade lasers. A …

The terahertz (THz) region of the electromagnetic spectrum remains relatively
underdeveloped and unexploited. This is due to the lack of compact and high-power …

A 15 μm thick active region terahertz (2.86 THz) quantum cascade laser was optimized for
maximum continuous wave temperature operation. Through the use of high‐resolution x‐ray …