A review of recent power amplifier IC
This paper given a brief and concise discussion on latest research of RFIC power amplifier
(PA) designs, showing the frontier state-of-the-art developments, and then present our PA …
(PA) designs, showing the frontier state-of-the-art developments, and then present our PA …
Recent progress on high-efficiency CMOS and SiGe RF power amplifier design
The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-
V semiconductors today. However, by taking advantage of nm silicon devices and novel RF …
V semiconductors today. However, by taking advantage of nm silicon devices and novel RF …
Design Continues Mode Inverse Class-F Power Amplifier
CD Atilla, MOH Alsaedi… - … on Engineering and …, 2023 - ieeexplore.ieee.org
This paper outlines the design, simulation, and testing of a continuous mode inverse class-F
(CMICF) power amplifier (PA) specifically optimized for GSM applications. The …
(CMICF) power amplifier (PA) specifically optimized for GSM applications. The …
A wideband highly efficient class-J integrated power amplifier for 5G applications
T Hanna, N Deltimple… - 2017 15th IEEE …, 2017 - ieeexplore.ieee.org
Next generation mobile systems are expanding their spectrum to millimeter wave frequency
bands to support data rates up to multigigabits per second. The power amplifier is a critical …
bands to support data rates up to multigigabits per second. The power amplifier is a critical …
High-efficiency silicon RF power amplifier design–current status and future outlook
Silicon RF power amplifiers (PAs) are in various RF front end modules (FEMs) today for
handset and WLAN applications. Even though III-V semiconductor-based RF PAs can still …
handset and WLAN applications. Even though III-V semiconductor-based RF PAs can still …
A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS
SY Mortazavi, KJ Koh - 2015 IEEE Radio Frequency Integrated …, 2015 - ieeexplore.ieee.org
This paper presents a 38 GHz 2-stage harmonic-tuned power amplifier consisted of a class-
F-1 output power amplifier proceeded by a class-AB driving stage in 0.13 μm SiGe BiCMOS …
F-1 output power amplifier proceeded by a class-AB driving stage in 0.13 μm SiGe BiCMOS …
A 30-40 GHz Continuous Class F−1 Power Amplifier with 35.8% Peak PAE in 65 nm CMOS Technology
ZH Wang, CN Chen, H Wang - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
This paper presents a continuous-mode inverse Class-F (ie, Class-F-1) power amplifier
design to achieve both high efficiency and wide bandwidth for 5G communications. The …
design to achieve both high efficiency and wide bandwidth for 5G communications. The …
[图书][B] Optimized class-E RF power amplifier design in bulk CMOS
T Wang - 2007 - search.proquest.com
OPTIMIZED CLASS-E RF POWER AMPLIFIER DESIGN IN BULK CMOS by TAO WANG
Presented to the Faculty of the Graduate School of The Univ Page 1 OPTIMIZED CLASS-E …
Presented to the Faculty of the Graduate School of The Univ Page 1 OPTIMIZED CLASS-E …
A 77GHz power amplifier design scheme for automotive radar
S Yang, L Zhang, J Fu - … on Electron Devices and Solid-State …, 2017 - ieeexplore.ieee.org
This paper presents a 77GHz, 16dBm, 13% PAE power amplifier. It is simulated in a 0.13 um
silicon-germanium technology with f T of 200GHz. The design technique is not the same as …
silicon-germanium technology with f T of 200GHz. The design technique is not the same as …
An input driver circuit for class f power amplifier
HM Zhe, AKB A'ain, AV Kordesch - 2006 International RF and …, 2006 - ieeexplore.ieee.org
An input driver circuit for driving a cascode stage Class F RF Power Amplifier in deep
submicron CMOS technology is proposed. The input driver circuit will deliver an …
submicron CMOS technology is proposed. The input driver circuit will deliver an …