In this chapter, we introduce the reversible, nonvolatile change in electrical resistance of
transition metal oxide interfaces known as resistive switching. This effect occurs driven by …

In a memristor or a so-called memristive device, the resistance state depends on the
previous charge flow through the device. The new resistance state is stored and classifies a …

In a memristor or a so-called memristive device, the resistance state depends on the
previous charge flow through the device. The new resistance state is stored and classifies a …

Metal oxides are commonly used as electrolytes for redox-based resistive switching
memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We …

We investigate the hopping transport of positively charged mobile oxygen vacancies V o+ in
electroforming-free bipolar memristive Bi Fe O 3 switches by conducting impedance …

In this chapter, the roles of interfaces and interfacial reactions on the resistive switching
behavior of oxide-based redox-type memristive (ReRAM) devices are discussed. Typical …

One of the most recent applications of TiO 2 thin films is as an oxide layer in memristors,
electronic devices considered as one of the most promising nonvolatile memories and as …

Nanoscale metal/oxide/metal switches have the potential to transform the market for
nonvolatile memory and could lead to novel forms of computing. However, progress has …

Oxide‐based resistive switching devices are a leading contender for the next generation
memories. Before use, each device has to go through a conditioning process called …

Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating,
oxides can change behavior under high electric fields—through'electroforming'or'breakdown …