With feature size of device scaled down 45 nm technological node and beyond, the backend
of the line (BEOL) faces too many problems such as resistance–capacitance (RC) delay …

Amorphous SiCN (a-SiCN) is a candidate for barrier dielectric and has lower dielectric
constant (k∼ 5) relative to the commonly used barrier SiN (k∼ 7). In this study, we …

We developed a highly reliable enhanced nitride Interface (ENI) process of barrier low-k
using an ultra-thin SiN (UT-SiN) for 40-nm node devices and beyond. The UT-SiN (3 nm) …

Silicon carbonitride (SiCN) films deposited using silazane singe-precursor with different
temperatures were capped onto porous carbon-doped silicon oxide (p-SiOCH) dielectric …

For 28 nm technological node, porous ultra low dielectric constant (p-ULK) film has been
used as an insulator in Cu interconnection in the back-end of the line (BEOL). The interfacial …

The improvement of the interface adhesion between Cu and silicon carbonitride (SiCN)
dielectric barrier layer is required in the back end of the line for 28 nm technological node …

In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~ 70 nm
by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen …

Multi-layer SiNO barrier film with high breakdown and low leakage is developed for Cu low k
interconnects and is compared with the SiCN and SiN barrier films used at previous …

In this study, two types of silicon carbonitride (SiC x N y) layers using different deposition
precursors (single-source and multi-source precursors) were capped onto the porous low …

Abstract Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied
for various ashing conditions. According to X-ray photoelectron spectra analyses, bonds …