Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …

Abstract Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band
structure of Bi containing alloys such as InP 1− x Bi x, InAs 1− x Bi x, InSb 1− x Bi x and …

We have performed ab initio self-consistent calculations based on the full potential linear
augmented plane-wave method with the generalized gradient approximation to investigate …

Boron arsenide, the typically ignored member of the Group-III–V arsenide series BAs-AlAs-
GaAs-InAs is found to resemble silicon electronically: its Γ conduction-band minimum is p …

Valence band anticrossing (VBAC) model has been used to explain the strong reduction in
band gap as well as the increase in spin–orbit splitting energy with increasing bismuth …

Photoreflectance (PR) spectroscopy was applied to study the band gap in GaSb 1− x Bi x
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …

We have performed ab‐initio self‐consistent calculations using the full potential linear
augmented plane wave method to investigate the structural and the electronic properties of …

We show through band structure calculations that III-V-Bi alloys, emerging as a new class of
semiconductor materials, differ nontrivially from their counterparts III-VN alloys which have …

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for
experimental engineering of the band gap E g at low Bi concentrations (≤ 2%), in particular …

We present a theoretical study mainly devoted to the investigation of the bowing parameter
in the GaAs1–xBix alloy. Results reveal that the fundamental band gap for GaAs is close to …