We investigate the use of Raman spectroscopy to measure carrier concentrations in n-type
GaSb epilayers to aid in the development of this technique for the nondestructive …

Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room
temperature as a function of electron concentration. These spectra were obtained using an …

Phonon-plasmon coupled mode Raman spectra of p-type GaSb were measured at room
temperature as a function of hole concentration. These spectra were obtained using an …

The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-
called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface …

Reflectance measurements from 50 to 5000 cm− 1 were made at room temperature on
several GaSb layers grown by molecular beam epitaxy on GaAs substrates, and n-doped …

The effect of carrier concentration and compensation on the electron mobilities in GaSb at
300 and 77 K are investigated. Since the energy of the L band minima relative to the Γ band …

IR reflectivity measurements were made on thin epitaxial GaSb layers grown on n+ GaSb
and semi-insulating GaAs substrates. The results were interpreted using a two-oscillator …

The complex refraction index and dielectric functions of GaSb bulk (both p and n-type) and
MBE film were accurately determined from 0.0025 to 6 eV by using reflectance and …

In this paper, we present the theory for calculating Raman line shapes as functions of the
Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities …

We demonstrate quantitatively how values of electron densities in GaAs extracted from
Raman spectra of two samples depend on models used to describe electric susceptibility …