We consider in our work single crystal thin films of Bi 2 Se 3, grown by molecular beam
epitaxy, both with and without Pb doping. Angle-resolved photoemission data demonstrate …

We demonstrate that the weak antilocalization effect can serve as a convenient method for
detecting decoupled surface transport in topological insulator thin films. In the regime where …

We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …

With high quality topological insulator Bi 2 Se 3 thin films, we report thickness-independent
transport properties over wide thickness ranges. Conductance remained nominally constant …

While evidence of a topologically nontrivial surface state has been identified in surface-
sensitive measurements of Bi 2 Se 3, a significant experimental concern is that no …

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along
with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi …

We report a transport study of ultrathin Bi 2 Se 3 topological insulators with thickness from
one quintuple layer to six quintuple layers grown on sapphire by molecular beam epitaxy. At …

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi $
_2 $ Se $ _3 $ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca …

Low-field magnetotransport measurements of topological insulators such as Bi 2 Se 3 are
important for revealing the nature of topological surface states by quantum corrections to the …

We show that in the new topological-insulator compound Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 one
can achieve a surfaced-dominated transport where the surface channel contributes up to …