Terahertz radiation and its nonlinear optical manipulation may possess potential for a variety
of applications in next‐generation electronics and optics. Pioneering studies have shown …

Ultrafast charge transport in strongly biased semiconductors is at the heart of high-speed
electronics, electro-optics and fundamental solid-state physics,,,,,,,,,,,,. Intense light pulses in …

In this paper, optical second-harmonic generation of terahertz field from n-type InSb
semiconductors is investigated. The inter-band transitions generate electron-hole charge …

High input intensities are usually required to efficiently produce nonlinear optical effects in
ultrathin structures due to their extremely weak nature. This problem is particularly critical at …

The authors demonstrate an efficient room temperature source of terahertz radiation using
femtosecond laser pulses as a pump and GaAs structures with periodically inverted …

The second-order nonlinear response of bulk GaAs in the terahertz (THz) range is mapped
via the THz field emitted after near-infrared interband excitation. Phase-resolved THz …

We report on terahertz (THz) generation via optical rectification in a room temperature
gallium arsenide (GaAs) crystal pumped at a wavelength of 1.8 μm using a modified tilted …

We aim to generate high-intensity terahertz (THz) electric fields and study nonlinear
phenomena in GaAs and graphene to investigate their applications. To obtain a high …

Zincblende semiconductors (GaAs, GaP) show great potential for quasi-phase-matched
(QPM) THz generation because of their small (20 times less than in lithium niobate) …

The nonlinear response of optical materials provides a valuable approach for optical
switching and nonlinear frequency conversion. However, the nonlinear responses of bulk …