Although orthorhombic GeSe is predicted to have an ultrahigh figure of merit, ZT≈ 2.5, up to
now, the highest experimental value is≈ 0.2 due to the low carrier concentration (nH≈ 1018 …

The structure–property link is inherent to materials. Hexagonal Ge4Se3Te phase, with
special Ge–Ge cationic bonding and distinctive from other IV–VI compounds, reveals …

GeSe was theoretically predicted to have thermoelectric (TE) performance as high as SnSe.
However, the relatively high TE performance was not achieved experimentally in doped …

GeSe is a IV–VI semiconductor, like the excellent thermoelectric materials PbTe and SnSe.
Orthorhombic GeSe has been predicted theoretically to have good thermoelectric …

Rhombohedral GeSe is a promising p-type thermoelectric material with a multivalley band
structure. However, its figure of merit ZT, especially average ZT is still relatively low …

High symmetry favors high power factor by virtue of the balanced Seebeck coefficient and
carrier mobility, nonetheless, the role of crystal symmetry in enhancing the material's …

As one of the state-of-the-art phase-change materials, the stable Ge2Sb2Te5 hexagonal
compound also exhibits decent thermoelectric performance with high electrical conductivity …

Enhancing crystal symmetry is perceived as the most efficacious strategy to improve the
thermoelectric performance of GeSe. Although multicomponent alloying is commonly …

Nanostructured thermoelectric materials of GeSe1− xTex (0≤ x≤ 0.2) alloys were prepared
by mechanical ball milling, followed by consolidation under a hydrogen atmosphere and …

The GeTe compound has been revealed to be an outstanding thermoelectric compound,
while its inherent high thermal conductivity restricts further improvement in its performance …