This chapter reviews the status of SiC Schottky barrier diode development. The
fundamentals of Schottky barrier diodes are first provided, followed by the review of high …

ABSTRACT The SiC Schottky Barrier Diode (SBD) is commercially available in the 600-
1200 V/1-10 A range. The main advantage of a high voltage SiC SBD lies in its superior …

The Junction Barrier Schottky (JBS) diode in silicon carbide is a promising candidate for a
low-leakage power rectifier for high switching frequencies and elevated temperature …

Abstract 4H-SiC junction-barrier Schottky (JBS) diodes blocking 1000 V have been
fabricated. IV characteristics have been evaluated at room temperature and 255 C in …

Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised
electrically. This device, demonstrated in silicon technology, has the advantage of a low …

Silicon carbide (SiC) is a semiconductor material that may enable the transition of traditional
silicon (Si) power electronics into smart power. SiC material properties allow devices with …

This paper experimentally studies the temperature dependencies of current–voltage (I–V)
and capacitance–voltage (C–V) characteristics of SiC power devices, and discusses the …

This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking
over 10 kV based on 115-μm n-type epilayers doped to 5.6× 10/sup 14/cm/sup-3/through the …

The static and dynamic characteristics of large-area, high-voltage 4H-SiC Schottky barrier
diodes are presented. With a breakdown voltage greater than 1200 V and a forward current …

Silicon Carbide device technology is now evolving from a pure vision to a real alternative to
silicon devices. The feasibility of SiC devices has been shown for many different types of …