The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new
structure with little available information about its emission properties compared to the most …

Gallium phosphide is a low-loss, high-refractive-index semiconductor considered as a
promising material for active and passive components in modern nanophotonics. In this …

Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ
GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence …

Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications,
possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However …

The main challenge for light-emitting diodes is to increase the efficiency in the green part of
the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an …

Wurtzite III-phosphide GaP and GaAsP compounds have shown tunable direct band-gap
making them promising candidates in a variety of future optoelectronic and photonic …

Ga x In 1− x P alloys grown by metalorganic vapor phase epitaxy (MOVPE) are known to
exhibit spontaneous long-range ordering that results in a modification of the alloy electronic …

For vertical-cavity surface-emitting lasers (VCSELs) or photoelectrochemical devices and
high efficient III-V/Ge (100) photovoltaics, preparation of double-atomic steps on Ge (100) …

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal
material for photonic structures targeted at the visible wavelengths. However, these …

Evolution of luminescence is reported from GaP crystals that were grown over 40 years ago.
This is the longest running cycle of experiments to study the temporal effects of crystal lattice …