Carrier Transport and Gain Mechanisms in –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors
In this paper, carrier transport and gain mechanisms are exploited in the β-Ga 2 O 3-based
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …
Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism
In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for
their potential applications in solar-blind imaging, deep space exploration, confidential …
their potential applications in solar-blind imaging, deep space exploration, confidential …
On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
EB Yakimov, AY Polyakov, IV Shchemerov… - Journal of Alloys and …, 2021 - Elsevier
Lightly n-type doped Ga 2 O 3 layers grown by Halide Vapor Phase Epitaxy (HVPE) on bulk
n+-Ga 2 O 3 substrates were subjected to irradiation with fast reactor neutrons, 20 MeV …
n+-Ga 2 O 3 substrates were subjected to irradiation with fast reactor neutrons, 20 MeV …
Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors
The low dark current, high responsivity and high specific detectivity could be preferably
achieved in detectors based on junctions, owing to the efficient constraint of carriers …
achieved in detectors based on junctions, owing to the efficient constraint of carriers …
Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga2O3 solar-blind detectors with high rejection ratios
The metal-semiconductor-metal (MSM) structure is a popular architecture for developing Ga
2 O 3 solar blind photodetectors. The nature of metal-semiconductor contact is decisive for …
2 O 3 solar blind photodetectors. The nature of metal-semiconductor contact is decisive for …
High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors
High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors
fabricated on pulsed laser deposited β-Ga 2 O 3 thin films has been investigated. These …
fabricated on pulsed laser deposited β-Ga 2 O 3 thin films has been investigated. These …
[HTML][HTML] Improved response speed of β-Ga2O3 solar-blind photodetectors by optimizing illumination and bias
Abstract Ga 2 O 3-based solar-blind ultraviolet photodetectors (PDs) have stimulated
extensive attention for covering both civilian and military applications. During the past …
extensive attention for covering both civilian and military applications. During the past …
[HTML][HTML] Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors
The temperature dependent photoresponse of planar photodetectors fabricated on β-Ga 2 O
3 films grown on Al 2 O 3 by metalorganic chemical vapor deposition to 254 nm wavelength …
3 films grown on Al 2 O 3 by metalorganic chemical vapor deposition to 254 nm wavelength …
High-Performance Metal-Organic Chemical Vapor Deposition Grown -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes
In this letter we present a high performance-Ga 2 O 3 solar-blind photodetector (SBPD) with
asymmetric Schottky electrodes. The-Ga 2 O 3 films were heteroepitaxially grown on-plane …
asymmetric Schottky electrodes. The-Ga 2 O 3 films were heteroepitaxially grown on-plane …
Comprehensively Improved Performance of β-Ga2O3 Solar-Blind Photodetector Enabled by a Homojunction with Unique Passivation Mechanisms
Ga2O3-based solar-blind photodetectors have been extensively investigated for a wide
range of applications. However, to date, a lot of research has focused on optimizing the …
range of applications. However, to date, a lot of research has focused on optimizing the …